Uniaxial mechanical stress influence on the low frequency noise in FD SOI nMOSFETs operating in saturation

DE SAOUZA, M. A. S.CLAEYS, C.Rodrido DoriaMarcelo Antonio PavanelloSIMOEN, E.2022-01-122022-01-122012-03-17DE SAOUZA, M. A. S.; CLAEYS, C.; DORIA, R.; PAVANELLO, M. A.; SIMOEN, E. Uniaxial mechanical stress influence on the low frequency noise in FD SOI nMOSFETs operating in saturation, March, 2012.https://repositorio.fei.edu.br/handle/FEI/4142This work presents a study of the influence of mechanical stress on the low frequency noise in planar SOI transistors operating in saturation. Several channel lengths were measured, and the results show a reduction of the low frequency noise for strained devices independent of the channel length, and this reduction is more effective for smaller channel lengths. © 2012 IEEE.Acesso RestritoUniaxial mechanical stress influence on the low frequency noise in FD SOI nMOSFETs operating in saturationArtigo de evento10.1109/ICCDCS.2012.6188929Low frequency noisePlanar SOISCESLUniaxial mechanical stress