Application of the Symmetric Doped Double-Gate Model in Circuit Simulation Containing Double-Gate Graded-Channel Transistors

CONTRERAS, EstebanCERDEIRA, AntonioALVARADO, JoaquinPAVANELLO, Marcelo A.2019-08-192019-08-192010CONTRERAS, Esteban; CERDEIRA, Antonio; ALVARADO, Joaquin; PAVANELLO, Marcelo A.. Application of the Symmetric Doped Double-Gate Model in Circuit Simulation Containing Double-Gate Graded-Channel Transistors. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 5, n. 2, p. 110-115, 2010.1807-1953https://repositorio.fei.edu.br/handle/FEI/1079Acesso RestritoApplication of the Symmetric Doped Double-Gate Model in Circuit Simulation Containing Double-Gate Graded-Channel TransistorsArtigo