Emam M.Pavanello M.A.Danneville F.Vanhoenacker-Janvier D.Raskin J.-P.2019-08-192019-08-192011EMAM, Mostafa; PAVANELLO, M.A.; DANNEVILLE, F.; VANHOENACKER-JANVIER, D.; RASKIN, Jean Pierre. High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs. ADVANCED MATERIALS RESEARCH (ONLINE), v. 276, p. 67-75, 2011.1022-6680https://repositorio.fei.edu.br/handle/FEI/1139The effect of elevated temperature on the harmonic distortion in Graded-Channel MOSFETs is presented in this work. The Graded-Channel devices show interesting advantages in terms of nonlinear behavior compared to classical devices especially at higher temperatures up to 200°C. © (2011) Trans Tech Publications, Switzerland.Acesso RestritoArtigo10.4028/www.scientific.net/AMR.276.67Deep-submicron MOSFETGraded-channel MOSHarmonic distortionsHigh temperature