AGOPIAN, P. G. D.MARTINO, J. A.SIMOEN, E.CLAEYS, C.2022-01-122022-01-122011-01-05AGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Global and/or local strain influence on p- and nMuGFET analog performance. ECS Transactions, v. 35, n. 5, p. 145-150, 2011.1938-5862https://repositorio.fei.edu.br/handle/FEI/4203In this work, the analog performance is evaluated for tri-gate p-and nMuGFETs processed with and without the implementation of different global or local strain engineering techniques. For n-channel devices, the intrinsic voltage gain showed to be worse for strained devices when the fin is narrow. Only for wider fins the voltage gain increases with the strain efficiency due to mobility enhancement. Besides the voltage gain, the transconductance, output conductance and Early Voltage are also evaluated. In spite of the smaller impact of strain engineering, pMuGFETs show better analog behavior for all studied parameters. ©The Electrochemical Society.Acesso RestritoArtigo de evento10.1149/1.3570789