ALBERTON. S. G.BOAS, A. C. V.MEDINA, N. H.Marcilei Aparecida GuazzelliAGUIAR, V. A. P.ADDED, N.FEDERICO, C. A.GONZALEZ, O. L.CAVALCANTE, T. C.PEREIRA, E. C. F.VAZ, R. G.2022-11-012022-11-012022-01-05ALBERTON. S. G.; BOAS, A. C. V.; MEDINA, N. H.; GUAZZELLI, M. A.; AGUIAR, V. A. P.; ADDED, N.; FEDERICO, C. A.; GONZALEZ, O. L.; CAVALCANTE, T. C.; PEREIRA, E. C. F.; VAZ, R. G. Neutron-Induced Radiation Effects in UMOS Transistor. Journal of Physics: Conference Series, v. 2340, n. 1, 2022.1742-6596https://repositorio.fei.edu.br/handle/FEI/4619© 2022 Institute of Physics Publishing. All rights reserved.Ground level electronics and avionics systems may suffer from radiation effects induced by neutrons. Neutrons can induce radiation effects in electronic devices via fusion-evaporation nuclear reactions, but few studies have been reported for technologies such as UMOSFET. In this work, estimates and experimental studies on neutron-induced radiation effects via nuclear reactions in a Si-based UMOSFET are presented. Methods for probability estimates of neutron-induced Single-Event Effects (SEEs) in Si-based power transistors and neutron beam energy measurement is presented. The energy spectrum of a UMOSFET subject to fast neutron irradiation was then compared to that of a high charge collection efficiency silicon particle detector.Acesso AbertoArtigo de evento10.1088/1742-6596/2340/1/012046