Effect of the temperature on on Junctionless Nanowire Transistors electrical parameters down to 4K

TREVISOLI, R.Michelly De SouzaRodrido DoriaKILCHTYSKA, V.FLANDRE, D.Marcelo Antonio Pavanello2022-01-122022-01-122014-10-29TREVISOLI, R.; DE SOUZA, M.; DORIA, R.; KILCHTYSKA, V.; FLANDRE, D.; PAVANELLO, M. A. Effect of the temperature on on Junctionless Nanowire Transistors electrical parameters down to 4K. 2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014. Oct. 2014.https://repositorio.fei.edu.br/handle/FEI/4004The aim of this work is to analyze the operation of Junctionless Nanowire Transistors at liquid helium temperature, focusing the operation at linear regime. The drain current, the transconductance, the low field mobility, subthreshold slope, the interface trap density and the channel resistance are the key parameters under analysis.Acesso RestritoEffect of the temperature on on Junctionless Nanowire Transistors electrical parameters down to 4KArtigo de evento10.1109/SBMicro.2014.6940134Junctionless TransistorsLiquid Helium TemperatureLow Field Mobility