ASSALTI, R.Marcelo Antonio PavanelloFLANDRE, D.Michelly De Souza2022-01-122022-01-122015-10-13ASSALTI, R.; PAVANELLO, M. A.; FLANDRE, D.; DE SOUZA, M. Asymmetric Self-Cascode versus Graded-Channel SOI nMOSFETs for analog applications. SBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices. Oct. 2015.https://repositorio.fei.edu.br/handle/FEI/3950This paper compares the performance of Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs, both proposed to improve the analog performance of fully depleted SOI nMOSFETs. The differences at device level are evaluated and the impact of their application in basic analog circuits, i.e. common-source amplifier, source-follower and common-source current mirror are explored through experimental results.Acesso RestritoAsymmetric Self-Cascode versus Graded-Channel SOI nMOSFETs for analog applicationsArtigo de evento10.1109/SBMicro.2015.7298120Asymmetric Self-CascodeCommon-source amplifierCommon-source current mirrorFD SOI nMOSFETsGraded-ChannelSource-follower