Experimental comparative study between the diamond MOSFET and its conventional counterpart in high temperatures environment

GALEMBECK, E. H. S.RENAUZ, C.FLANDRE, D.Salvador Gimenez2022-01-122022-01-122013-10-20GALEMBECK, E. H. S.; RENAUZ, C.; FLANDRE, D.; GIMENEZ, S. Experimental comparative study between the diamond MOSFET and its conventional counterpart in high temperatures environment. 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013, Oct. 2013.https://repositorio.fei.edu.br/handle/FEI/4086Acesso RestritoExperimental comparative study between the diamond MOSFET and its conventional counterpart in high temperatures environmentArtigo de evento10.1109/S3S.2013.6716568