Creative Commons "Este é um artigo publicado em acesso aberto sob uma licença Creative Commons (CC BY-NC-ND 4.0). Fonte: https://jics.org.br/ojs/index.php/JICS/article/view/188. Acesso em: 11 nov. 2021.SILVA, LUCAS MOTA BARBOSA DAPAZ, BRUNA CARDOSOMichelly De Souza2021-11-102021-11-102020-07-31SILVA, L. M. B.; PAZ, B. C.; SOUZA, M. DE. Analysis of mobility in graded-channel SOI transistors aiming at circuit simulation. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 15, n. 2, p. 1-5, 2020.1807-1953https://repositorio.fei.edu.br/handle/FEI/3455This work presents an analysis of the behavior of the effective mobility of graded-channel FD SOI transistors us-ing an Y-Function-based technique. Low field mobility, linear and quadratic attenuation factors were extracted from two-di-mensional numerical simulations. The influence of the length of both channel regions over these parameters was analyzed. The parameters extracted from experimental data were used in a SPICE simulator, showing that it is possible to simulated GC SOI MOSFET using a regular SOI MOSFET model, by adjust-ing its parameters. This approach presents a percentage error smaller than 7.91% for low VDS.Acesso AbertoY-FunctionGraded-Channel transistorsSOIEffective mobilitySPICE simulationArtigo10.29292/jics.v15i2.188