Trevisoli R.Doria R.T.De Souza M.Barraud S.Vinet M.Pavanello M.A.2019-08-192019-08-192016TREVISOLI, RENAN; Doria, Rodrigo Trevisoli; DE SOUZA, Michelly; BARRAUD, SYLVAIN; VINET, MAUD; Pavanello, Marcelo Antonio. Analytical Model for the Dynamic Behavior of Triple-Gate Junctionless Nanowire Transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 63, n. 2, p. 856-863, 2016.0018-9383https://repositorio.fei.edu.br/handle/FEI/1112© 2015 IEEE.This paper presents an analytical model for the intrinsic capacitances and transconductances of triple-gate junctionless nanowire transistors. The model is based on a surface-potential drain current model, which includes shortchannel effects, and accounts for the dependences on the device dimensions, doping concentration, and quantum effects. It is validated with 3-D Technology Computer-Aided Design (TCAD) simulations for several device characteristics and biases as well as with the experimental results.Acesso RestritoArtigo10.1109/TED.2015.2507571Intrinsic capacitancesJunctionless nanowire transistors (JNTs)ModelingTransconductances