Agopian P.G.D.Arrabaca J.M.Martino J.A.2022-01-122022-01-122008AGOPIAN, P. G. D.; ARRABACA, J. M.; MARTINO, J. A. Halo optimization for 0.13μm SOI CMOS technology. ECS Transactions, v. 14, n. 1, p. 111-118, Sept. 2008.1938-5862https://repositorio.fei.edu.br/handle/FEI/4296This work presents the study of HALO implantation angle and its concentration influence on deep-submicrometer partially depleted SOI nMOSFETs electric characteristics. This study was performed through the threshold voltage and subthreshold slope analysis. As the implantation angle and the doping concentration of the HALO were varied, a large threshold voltage variation was obtained. It is demonstrated that for 0.13μm SOI CMOS technology devices, the most efficient HALO implantation occurs for 50 degrees and concentration range from 1.2×1018 cm-3 to 1.8×10 18cm-33. © The Electrochemical Society.Acesso RestritoArtigo de evento10.1149/1.2956024