Saturation threshold voltage degradation in deep-submicrometer fully depleted SOI nMOSFETs operating in cryogenic environments

Marcelo Antonio PavanelloMARTINO, J. A.SIMOEN, E.CLAEYS, C.2022-01-122022-01-122005-10-03PAVANELLO, M. A.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Saturation threshold voltage degradation in deep-submicrometer fully depleted SOI nMOSFETs operating in cryogenic environments. Proceedings - IEEE International SOI Conference, v. 2005, p. 72-73, October, 2005.https://repositorio.fei.edu.br/handle/FEI/4364Acesso RestritoSaturation threshold voltage degradation in deep-submicrometer fully depleted SOI nMOSFETs operating in cryogenic environmentsArtigo de evento10.1109/SOI.2005.1563538