LUGO-MUNOZ, D.MUCI, J.ORTIZ-CONDE, A.GARCIA-SANCHEZ, F. J.Michelly De SouzaFLANDRE, D.Marcelo Antonio Pavanello2022-01-122022-01-122011-09-02LUGO-MUNOZ, D.; MUCI, J.; ORTIZ-CONDE, A.; GARCIA-SANCHEZ, F. J.; DE SOUZA, M.; FLANDRE, D.; PAVANELLO, M. A. Characterization of thin-film SOI PIN diodes from cryogenic to above room temperatures using an explicit I-V multi-branch model. ECS Transactions, v. 39, n. 1, p.171-178, Sept. 2011.1938-5862https://repositorio.fei.edu.br/handle/FEI/4185A multi-branch model is proposed to describe multiple conduction mechanisms in thin-film SOI PIN diodes with parasitic series resistance over a wide operating temperature range, from 90 to 390 K. The model is composed of the parallel combination of three branches, each of them incorporating a diode and a series resistance. The model's unique advantage is its explicit nature which allows the terminal current to be continuously expressed as an explicit analytical function of the applied terminal voltage. The resulting explicit equation is convenient for repetitive simulation applications as well as for analytic differentiation and integration, in contrast to conventional models which only allow numerical solutions. The model's suitability has been assessed by parameter extraction and subsequent playback on real SOI PIN diode forward I-V characteristics. ©The Electrochemical Society.Acesso RestritoArtigo de evento10.1149/1.3615191