MARTINO, J. A.AGOPIAN, P. G. D.SIMOEN, E.CLAEYS, C.2022-01-122022-01-122014-10-31MARTINO, J. A.; AGOPIAN, P. G. D.; SIMOEN, E.; CLAEYS, C. Field effect transistors: From mosfet to Tunnel-Fet analog performance perspective. Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Oct. 2014.https://repositorio.fei.edu.br/handle/FEI/4018© 2014 IEEE.This paper will discuss the analog behavior of the main insulated gate field effect transistor (FET) roadmap, like Silicon-On-Insulator (SOI) MOSFET, Graded-Channel (GC) SOI MOSFET, triple-gate SOI FinFET and Tunnel-FET (TFET) devices. The main analog Figures of Merit (FoM) like transconductance over drain current ratio, Early voltage, intrinsic voltage gain and unit gain frequency will be analyzed.Acesso RestritoArtigo de evento10.1109/ICSICT.2014.7021276