A Simple Electron Mobility Model Considering the Silicon-Dielectric Interface Orientation for Circular Surrounding-Gate Transistor

PERIN, A. L.PEREIRA, A. S. N.AGOPIAN, P. G. D.MARTINO, J. A.GIACOMINI, R.2019-08-192019-08-192012PERIN, A. L.; PEREIRA, A. S. N.; AGOPIAN, P. G. D.; MARTINO, J. A.; GIACOMINI, R.. A Simple Electron Mobility Model Considering the Silicon-Dielectric Interface Orientation for Circular Surrounding-Gate Transistor. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 7, n. 2, p. 100-106, 2012.1807-1953https://repositorio.fei.edu.br/handle/FEI/1148Acesso RestritoA Simple Electron Mobility Model Considering the Silicon-Dielectric Interface Orientation for Circular Surrounding-Gate TransistorArtigo