COSTA, F. J.TREVISOLI, R.Rodrigo Doria2022-12-012022-12-012022-07-04COSTA, F. J.; TREVISOLI, R.; DORIA, R. Ultra-Low-Power Diodes Composed by SOI UTBB Transistors. 2022 IEEE Latin America Electron Devices Conference, LAEDC 2022, Jul. 2022.https://repositorio.fei.edu.br/handle/FEI/4651© 2022 IEEE.The main objective of this work is to present an analysis of the performance of Ultra-Thin-Body and Buried Oxide transistors working as Ultra-Low-Power diodes. The implementation of different ground planes and substrate biases are analyzed. It is shown a reduced leakage current and increased ratio between the on and off-state currents for the Ultra-Low-Power diode with the N-substrate biased at -2V. However, this condition results in increased threshold voltage. The ground planes do not provoke a significant change in the leakage current, but a noticeable variation can be observed in the ratio between the on and off-state currents due to the higher threshold voltage in relation to the system without ground plane.Acesso RestritoArtigo de evento10.1109/LAEDC54796.2022.9908183SOIUltra-Low-Power DiodesUTBB