COSTA, F. J.TREVISOLI, R.Michelly De SouzaRodrigo Doria2022-01-122022-01-122020COSTA, F. J.; TREVISOLI, R.; DE SOUZA, M.; DORIA, R. Analysis of the Thermal Properties of Self-Cascode Structures Composed by UTBB Transistors. LAEDC 2020 - Latin American Electron Devices Conference, 2020.https://repositorio.fei.edu.br/handle/FEI/3657© 2020 IEEE.The focus of this work is to perform an analysis of the thermal properties of the Self-Cascode (SC) structure composed by advanced UTBB SOI MOSFETs under a selected set of back gate biases, through 2D numerical simulations. In this work, it could be observed that the SC structure presents a 50 % lower thermal resistance in comparison with a single device with similar channel length. The application of a back gate bias of 2 V to the drain-sided device or -2 V to the source-sided devices of the SC has shown a decrease of 10-16 % in the thermal resistance.Acesso RestritoAnalysis of the Thermal Properties of Self-Cascode Structures Composed by UTBB TransistorsArtigo de evento10.1109/LAEDC49063.2020.9073154Self-CascodeSelf-HeatingThermal ResistanceUTBB