TREVISOLI, R. D.Rodrido DoriaMichelly De SouzaDAS, S.FERAIN, I.Marcelo Antonio Pavanello2022-01-122022-01-122012-01-05TREVISOLI, R. D.; DORIA, R.; DE SOUZA, M.; PAVANELLO, M. A.; DAS, S. Surface-potential-based drain current analytical model for triple-gate junctionless nanowire transistors. IEEE Transactions on Electron Devices, v. 59, n. 12, p. 3510-3518, 2012.0018-9383https://repositorio.fei.edu.br/handle/FEI/4164This paper proposes a drain current model for triple-gate n-type junctionless nanowire transistors. The model is based on the solution of the Poisson equation. First, the 2-D Poisson equation is used to obtain the effective surface potential for long-channel devices, which is used to calculate the charge density along the channel and the drain current. The solution of the 3-D Laplace equation is added to the 2-D model in order to account for the short-channel effects. The proposed model is validated using 3-D TCAD simulations where the drain current and its derivatives, the potential, and the charge density have been compared, showing a good agreement for all parameters. Experimental data of short-channel devices down to 30 nm at different temperatures have been also used to validate the model. © 2012 IEEE.Acesso RestritoArtigo10.1109/TED.2012.2219055Drain current modeljunctionless nanowire transistors (JNTs)short-channel effects (SCEs)temperature dependence