de Andrade M.G.C.Martino J.A.2022-01-122022-01-122008-12-05DE ANDRADE, M. G. C.; MARTINO, J. A. Threshold voltages of SOI MuGFETs. Solid-State Electronics, v. 52, n. 12, p. 1877-1883, Dec. 2008.0038-1101https://repositorio.fei.edu.br/handle/FEI/4300The multiple-gate field-effect transistor (MuGFET) is a device with a gate folded on different sides of the channel region. They are one of the most promising technological solutions to create high-performance ultra-scaled SOI CMOS. In this work, the behavior of the threshold voltage in double-gate, triple-gate and quadruple-gate SOI transistors with different channel doping concentrations is studied through three-dimensional numerical simulation. The results indicated that for double-gate transistors, one or two threshold voltages can be observed, depending on the channel doping concentration. However, in triple-gate and quadruple-gate it is possible to observe up to four threshold voltages due to the corner effect and the different doping concentration between the top and bottom of the Fin. © 2008 Elsevier Ltd. All rights reserved.Acesso RestritoThreshold voltages of SOI MuGFETsArtigo10.1016/j.sse.2008.06.046Double-gateMuGFETQuadruple-gateSOIThreshold voltageTriple-gate