Experimental comparative analysis between junctionless and inversion mode nanowire transistors down to 10 nm-long channel lengths

Rodrigo DoriaTREVISOLI, R.Michelly De SouzaMarcelo Antonio PavanelloVINET, M.CASSE, M.FAYNOT, O.2022-01-122022-01-122018-10-18DORIA, R.; TREVISOLI, R.; DE SOUZA, M.; PAVANELLO, M. A.; VINET, M.; CASSE, M.; FAYNOT, O. Experimental comparative analysis between junctionless and inversion mode nanowire transistors down to 10 nm-long channel lengths. 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017, p.1-3, Oct. 2018.https://repositorio.fei.edu.br/handle/FEI/3796This paper aims at presenting, for the first time, an experimental comparative analysis between the main electrical parameters of Junctionless (JNT) and inversion mode nanowire (IM) transistors fabricated in SOI technology down to channel length of 10 nm. The analysis has shown that JNTs present larger immunity to SCEs with respect to IM nanowires of similar dimensions. However, JNTs have shown poorer Ion than IM devices, which could be compensated through the application of multifin JNTs, at cost of increasing area consumption.Acesso RestritoExperimental comparative analysis between junctionless and inversion mode nanowire transistors down to 10 nm-long channel lengthsArtigo de evento10.1109/S3S.2017.8308749DiBLJunctioless transistorsSOI TechnologySubthreshold swingTransconductanceUndoped Nanowires