TREVISOLI, R.Rodrido DoriaMichelly De SouzaMarcelo Antonio Pavanello2022-01-122022-01-122017-10-16TREVISOLI, R.; DORIA, R.; DE SOUZA, M; PAVANELLO, M. A. Lateral spacers influence on the effective channel length of junctionless nanowire transistors. 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017. v. 2018-March, p. 1-3, 2017.https://repositorio.fei.edu.br/handle/FEI/3793This work presents a deep analysis on the effect of lateral spacers on the performance of the Junctionless Nanowire Transistors. An analytical model to account for the spacer influence on the device electrical behavior is proposed and validated through numerical simulation results.Acesso RestritoArtigo de evento10.1109/S3S.2017.8309260Effective LengthJunctionless Nanowires TransistorsLateral Spacers