PEREIRA, A. S. N.Renato Giacomini2022-01-122022-01-122012-09-02PEREIRA, A. S. N.; GIACOMINI, R. A new analytic model for double gate FinFETs parasitic resistance. ECS Transactions, v. 49, n. 1, p. 127-134, Sept. 2012.1938-6737https://repositorio.fei.edu.br/handle/FEI/4162A new analytic model for Parasitic Resistance of Double Gate FinFETs is proposed in this work. The model was developed considering the current distribution observed in three-dimensional simulations. The contact resistance was modeled using a variable impedance transmission line model, to approximate source and drain geometries to the real shapes of these regions. The model has a closed expression, without adjustment parameters and is very accurate when compared to simulation results and published experimental data. © The Electrochemical Society.Acesso RestritoArtigo de evento10.1149/04901.0127ecst