ASSALTI, R.Rodrigo DoriaMarcelo Antonio PavanelloMichelly De SouzaFLANDRE, D.2022-01-122022-01-122016-08-29ASSALTI, R.; DORIA, R.; PAVANELLO, M. A.; DE SOUZA, M.; FLANDRE, D. Low-frequency noise in asymmetric self-cascode FD SOI nMOSFETs. SBMicro 2016 - 31st Symposium on Microelectronics Technology and Devices: Chip on the Mountains, co-located 29th SBCCI - Circuits and Systems Design, 6th WCAS - IC Design Cases, 1st INSCIT - Electronic Instrumentation and 16th SForum - Undergraduate-Student Forum, 2016.https://repositorio.fei.edu.br/handle/FEI/3874This paper investigates the origin of low-frequency noise in Asymmetric Self-Cascode Fully Depleted SOI nMOSFETs biased in linear regime with regards to the variation of gate voltage and the channel doping concentration through experimental results.Acesso RestritoArtigo de evento10.1109/SBMicro.2016.7731354Asymmetric Self-Cascodeexperimental resultsFD SOI nMOSFETsLinear regimeLow-frequency noiseTrap density