VONO PERUZZI, V.RENAUX, C.FLANDRE, D.Salvador Gimenez2022-01-122022-01-122017-09-01VONO PERUZZI, V.; RENAUX, C.; FLANDRE, D.; GIMENEZ, S. Comparative experimental study of the improved MOSFETs matching by using the hexagonal layout style. SBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum, Sept. 2017.https://repositorio.fei.edu.br/handle/FEI/3819On this study, it is described an experimental comparative analysis of the devices matching regarding a 360 Metal-Oxide-Semiconductor Silicon-On-Insulator (SOI) Field Effect Transistors, n-type (nMOSFETs) sample, which were implemented with a hexagonal (Diamond) and rectangular gate geometries. Considering some relevant electrical parameters studied in the paper, the results indicate that the Diamond SOI nMOSFETs with α angles equal to 53.1° and 90° is able to be considered an alternative devices to boost about, at least 30% in average, the devices matching regarding those observed with the rectangular SOI MOSFET counterparts, considering the same gate areas and also the bias conditions.Acesso RestritoArtigo de evento10.1109/SBMicro.2017.8112993analog SOI CMOS ICsDevices Matchingnew layouts of SOI MOSFETsSOI nMOSFETs