The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime

DORIA, Rodrigo TrevisoliTREVISOLI, Renan DoriaDE SOUZA, MichellyCUETO, Magali EstradaCERDEIRA, AntonioPavanello, Marcelo Antonio2019-08-192019-08-192014DORIA, Rodrigo Trevisoli; TREVISOLI, Renan Doria; DE SOUZA, Michelly; CUETO, Magali Estrada; CERDEIRA, Antonio; Pavanello, Marcelo Antonio. The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 9, n. 2, p. 110-117, 2014.1807-1953https://repositorio.fei.edu.br/handle/FEI/1105Acesso RestritoThe Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear RegimeArtigo