ALBERTON. S. G.MEDINA, N. H.ADDED, N.AGUIAR, V. A. P.Marcilei Aparecida GuazzelliRoberto Santos2023-01-012023-01-012021-09-13ALBERTON. S. G.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P.; GUAZZELLI, M. A.; SANTOS, R. Heavy-Ion-Induced Avalanche Multiplication in Low-Voltage Power VDMosfet. RADECS 2021 - European Conference on Radiation and its Effects on Components and Systems, sept. 2021.https://repositorio.fei.edu.br/handle/FEI/4672© 2021 IEEE.Lackner's theory for avalanche multiplication in semiconductor devices provides physical interpretation for the model parameters and obtaining them through experimental methods is necessary. In this work, the charge collection mechanisms of heavy-ion-induced avalanche multiplication in power MOSFETs are studied based on Lackner's impact ionization model. The heavy-ion-induced impact ionization coefficients were estimated by comparing collected charge values obtained from computational simulations and experimental measurements.Acesso RestritoArtigo de evento10.1109/RADECS53308.2021.9954563Avalanche multiplicationheavy-ionhigh-injectionionization impactpower MOSFETSingle-Event Effects