AGOPIAN, P. G. D.MARTINO, J. A.ROOYACKERS, R.VANDOOREN, A.SIMOEN, E.CLAEYS, C.2022-01-122022-01-122013-01-05AGOPIAN, P. G. D.; MARTINO, J. A.; MARTINO, J. A.; VANDOOREN, A.; SIMOEN, E.; CLAEYS, C.Experimental comparison between trigate p-TFET and p-FinFET analog performance as a function of temperature. IEEE Transactions on Electron Devices, v. 60, n. 8, 2013.0018-9383https://repositorio.fei.edu.br/handle/FEI/4070This paper presents, for the first time, the experimental comparison between the p-type trigate FinFET and trigate p-TFET analog performances for devices fabricated on the same wafer. A careful analysis of the electrical characteristics is performed to choose the best bias conditions for the analog comparison between these devices. A higher intrinsic voltage gain is obtained for p-TFET devices because of their better output conductance, which is more than four orders of magnitude better than the one obtained for p-FinFET transistors at the same bias conditions from room temperature up to 150° C. © 1963-2012 IEEE.Acesso RestritoArtigo10.1109/TED.2013.2267614Analog performanceband-to-band tunneling (BTBT)multiple-gate tunneling field effect transistor (MuGTFET)self-heating effect (SHE)silicon-on-insulator (SOI)vertical multiple-gate SOI MOSFETs (FinFET)