Michelly De SouzaRUE, B.FLANDRE, D.Marcelo Antonio Pavanello2022-01-122022-01-122011-01-05DE SOUZA, M.; RUE, B.; FLANDRE, D.; PAVANELLO, M. A. Performance of ultra-low-power SOI CMOS diodes operating at low temperatures. ECS Transactions, v.35, n. 5, p. 325-330, Jan. 2011.1938-5862https://repositorio.fei.edu.br/handle/FEI/4204In this work the low temperature performance of ultra-low-power SOI CMOS diodes is presented. Experimental measurements performed in fabricated devices from 148K to 373K show that the temperature lowering can promote a significant leakage current reduction and increase of the forward current. Two-dimensional numerical simulations are used to extend the studied temperature range and analyze the doping concentration influence on the low temperature operation of these diodes. ©The Electrochemical Society.Acesso RestritoPerformance of ultra-low-power SOI CMOS diodes operating at low temperaturesArtigo de evento10.1149/1.3570813