Open Journal Systems "Este é um artigo publicado em acesso aberto sob uma licença de código aberto (GPL v2). Fonte: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85089906544&origin=inward. Acesso em: 27 maio 2022.PERUZZI, V. V.CRUZ, W. S.SILVA, G. A.SIMOEN, E.CLAEYS, C.Salvador Gimenez2022-01-122022-01-122020-01-05PERUZZI, V. V.; CRUZ, W. S.; SILVA, G. A.; SIMOEN, E.; CLAEYS, C.; GIMENEZ, S. Using the hexagonal layout style for mosfets to boost the device matching in ionizing radiation environments. Journal of Integrated Circuits and Systems, v. 15, n. 2, p. 1-5, Jan. 2020.1872-0234https://repositorio.fei.edu.br/handle/FEI/3679© 2020, Brazilian Microelectronics Society. All rights reserved.This paper describes an experimental comparative study of the mismatching between the Diamond (hexagonal gate geometry) and Conventional (rectangular gate shape) n-chan-nel Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs), which were manufactured in an 130 nm Sili-con-Germanium Bulk Complementary MOS (CMOS) technology and exposed to different X-rays Total Ionizing Doses (TIDs). The results indicate that the Diamond layout style with an alpha (α) angle equal to 90˚ for MOSFETs is capable of re-ducing the device mismatching by at least 17% regarding the electrical parameters studied as compared to the Conventional MOSFET (CnM) counterparts. Therefore, the Diamond layout style can be considered an alternative hardness-by-design (HBD) layout strategy to boost the electrical performance and TID tolerance of MOSFETs.Acesso AbertoArtigo10.29292/jics.v15i2.185Analog CMOS ICsDiamond Layout StyleHardness-by-design techniqueMOSFETs matchingTotal Ionizing Dose