Single-event effects: experimental setup for power MOSFETs and diffusion model for cross section calculations in low-voltage MOSFETs

Creative Commons "Este é um artigo publicado em acesso aberto sob uma licença Creative Commons (CC BY 3.0). Fonte: https://publishingsupport.iopscience.iop.org/licence-policy-for-articles-published-on-a-gold-open-access-basis/. Acesso em: 28 jun 2021ALBERTON, S GMEDINA, N HADDED, NAGUIAR, V A PMENEGASSO, RMACCHIONE, E L AGUAZZELLI, Marcilei Aparecida2019-01-05ALBERTON, S. G.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P; MENEGASSO, R.; MACCHIONE, E. L. A.; SILVEIRA, M. A. G. Single-event effects: experimental setup for power MOSFETs and diffusion model for cross section calculations in low-voltage MOSFETs. JOURNAL OF PHYSICS. CONFERENCE SERIES (PRINT), v. 1291, p. 012045, 2019.1742-6588https://repositorio.fei.edu.br/handle/FEI/3242MOSFETs are subject to di erent types of Single-Event E ects (SEEs) induced by heavy ions, with low-voltage MOSFETs being more susceptible to non-destructive e ects, such as Single-Event Transients, than high-voltage MOSFETs which may also be susceptible to destructive e ects. In this paper an experimental setup used to study SEEs in power MOSFETs at the S~ao Paulo 8UD Pelletron accelerator and computational simulations for SEE cross section calculations in low-voltage MOSFETs are presented.Acesso AbertoSingle-event effects: experimental setup for power MOSFETs and diffusion model for cross section calculations in low-voltage MOSFETsArtigo10.1088/1742-6596/1291/1/012045