Heavy ions induced single event upsets testing of the 28 nm Xilinx Zynq-7000 all programmable SoC

TAMBARA, L. A.KASTENSMIDT, F. L.MEDINA, N. H.ADDED, N.AGUIAR, V. A. P.AGUIRRE, F.MACCHIONE, E. L. A.Marcilei Aparecida Guazzelli2022-01-122022-01-122015-07-13TAMBARA, L. A.; KASTENSMIDT, F. L.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P.; AGUIRRE, F.; MACCHIONE, E. L. A.; GUAZZELLI, M. A. Heavy ions induced single event upsets testing of the 28 nm Xilinx Zynq-7000 all programmable SoC. IEEE Radiation Effects Data Workshop, v. 2015-November, Jul. 2015.https://repositorio.fei.edu.br/handle/FEI/3944© 2015 IEEE.The recent advance of silicon technology has allowed the integration of complex systems in a single chip. Nowadays, Field Programmable Gate Array (FPGA) devices are composed not only of the programmable fabric but also by hard-core processors, dedicated processing block interfaces to various peripherals, on-chip bus structures and analog blocks. Among the latest released devices of this type, this work focuses in the 28 nm Xilinx Zynq-7000 All Programmable SoC (APSoC). While not immune to the radiation environment in space, the Zynq-7000 seems to be very attractive for the aerospace sector due to its high computational power capability and low-power consumption. In this work, results from heavy ions testing for Zynq-7000 are presented. The experiments were performed in a Brazilian facility located at the University of São Paulo, Brazil.Acesso RestritoHeavy ions induced single event upsets testing of the 28 nm Xilinx Zynq-7000 all programmable SoCArtigo de evento10.1109/REDW.2015.7336716Field programmable gate arraysProgram processorsRandom access memorySiliconSingle event upsetsSystem-on-chip