ASSALTI, R.Marcelo Antonio PavanelloFLANDRE, D.Michelly De Souza2022-01-122022-01-122014-10-29ASSALTI, R.; PAVANELLO, M. A.; FLANDRE, D.; DE SOUZA, M. Dependence of the optimum length of light doped region of GC SOI nMOSFET with front gate bias. 2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014, Oct, 2014.https://repositorio.fei.edu.br/handle/FEI/4007This work assesses the analog performance of Graded-Channel FD SOI nMOSFET transistors regarding the dependence of gate voltage overdrive over the length of lightly doped region which maximizes the intrinsic voltage gain, unit gain frequency and breakdown voltage. It is shown that the optimum length of lightly doped region depends on the target application of GC devices.Acesso RestritoArtigo de evento10.1109/SBMicro.2014.6940099Breakdown voltageGate voltage overdriveGraded-ChannelIntrinsic voltage gainUnit gain frequency