NEMER, J. P.Michelly De SouzaFLANDRE, D.Marcelo Antonio Pavanello2022-01-122022-01-122013-09-06NEMER, J. P.; DE SOUZA, M; FLANDRE, D.; PAVANELLO, M. A. Low frequency noise in submicron Graded-Channel SOI MOSFETs. Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices. Sept. 2013.https://repositorio.fei.edu.br/handle/FEI/4092The origin of the low-frequency noise in submicron fully depleted Graded-Channel (GC) SOI MOSFET is investigated in terms of the channel length comparing two different technologies, OKI semiconductors and UCL. © 2013 IEEE.Acesso RestritoArtigo de evento10.1109/SBMicro.2013.6676173graded channellow frequency noiseSOISubmicron