ASSALTI, R.Michelly De SouzaFLANDRE, D.2022-01-122022-01-122017-09-01ASSALTI, R.; DE SOUZA, M.; FLANDRE, D. Channel width influence on the analog performance of the asymmetric self-cascode FD SOI nMOSFETs. SBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum, Sept. 2017.https://repositorio.fei.edu.br/handle/FEI/3822© 2017 IEEE.In this paper, the analog performance of the Asymmetric Self-Cascode structure of Fully Depleted SOI nMOSFETs has been evaluated with regards to the variation of channel width, through three-dimensional numerical simulations. The largest gain has been obtained using the narrowest transistor near the source and the widest transistor near the drain.Acesso RestritoArtigo de evento10.1109/SBMicro.2017.8112990analog performanceasymmetric self-cascodechannel widthFD SOI nMOSFETsnumerical simulations