AGOPIAN, P. G. D.MARTINO, J. A.KOBAYASHI, D.POIZAT, M.SIMON, E.CLAEYS, C.2022-01-122022-01-122010-11-04AGOPIAN, P. G. D.; MARTINO, J. A.; KOBAYASHI, D.; POIZAT, M.; SIMON, E.; CLAEYS, C. DIBL performance of 60 MeV proton-irradiated SOI MuGFETs. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. p. 105-107, Nov. 2010.https://repositorio.fei.edu.br/handle/FEI/4237The impact of a 60 MeV proton irradiation on the drain induced barrier lowering is investigated for tri-gate FinFETs processed with and without the implementation of different biaxial or uniaxial strain engineering techniques. A contrasting behavior is observed for n- and pFinFETs, which may be associated with the radiation-induced charges in the buried oxide and the influence of the back channel on the front transistor performance. ©2010 IEEE.Acesso RestritoArtigo de evento10.1109/ICSICT.2010.5667839