CENTRERAS, E.CERDEIRA, A.Marcelo Antonio Pavanello2022-01-122022-01-122010-01-05CENTRERAS, E.; CERDEIRA, A.; PAVANELLO, M. A. Simulation of OTA's with double-gate graded-channel MOSFETS using the symmetric doped double-gate model. ECS Transactions, v. 31, n. 1, p. 75-81, 2010.1938-5862https://repositorio.fei.edu.br/handle/FEI/4231In this paper Operational Transconductance Amplifiers (OTA's) were simulated in SPICE, using the Symmetric Doped Double-Gate Model which includes the capacitances of Double-Gate (DG) transistors. In this work, all the transistors have been simulated using just one model for lightly doped transistor (TLD) and high doped transistor (THd) N-channel devices and P-channel devices. These OTA's show an improvement in the high open-loop voltage gain which is related mainly to the reduction of the drain output conductance which give higher Early voltages for DG GC transistors. ©The Electrochemical Society.Acesso RestritoArtigo de evento10.1149/1.3474144