SILVA, L. M. B. DAMarcelo Antonio PavanelloCASSE, M.BARRAUD, S.VINET, M.FAYNOT, O.Michelly De Souza2022-11-012022-11-012022-08-22SILVA, L. M. B. DA; PAVANELLO, S. L. M. B. DA; BARRAUD, S.; VINET, M.; FAYNOT, O.; SOUZA, M. Analysis of Variability in Transconductance and Mobility of Nanowire Transistors. 36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings, aug. 2022.https://repositorio.fei.edu.br/handle/FEI/4628© 2022 IEEE.This work presents a comparison between the variability in junctionless nanowire transistors and inversion-mode nanowire transistors, looking at the transconductance, low-field mobility, linear and quadratic mobility degradation coefficients. To extract these parameters, the Y-Function method has been used. The obtained results shows differences in mobility and transconductance matching coefficients, indicating that mobility influence is not the only source of transconductance variation.Acesso RestritoArtigo de evento10.1109/SBMICRO55822.2022.9881023Inversion-modeJunctionlessMobilityNanowire TransistorsVariability