TEIXEIRA, F. F.BORDALLO, C. C. M.Marcilei Aparecida GuazzelliAGOPIAN, P. G. D.MARTINO, J. A.SIMOEN, E.CLAEYS, C.2022-01-122022-01-122013-09-06TEIXEIRA, F. F.; BORDALLO, C. C. M.; GUAZZELLI, M. A.; AGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Radiation effect on standard and strained triple-gate SOI FinFETs parasitic conduction. Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices, Sept. 2013.https://repositorio.fei.edu.br/handle/FEI/4094In this work, the X-ray irradiation influence on the back gate conduction and its impact on the drain current characteristic of Triple-Gate SOI FinFET are investigated. The impact of X-ray irradiation was analyzed taking into consideration two different splits: unstrained and uniaxial strained devices. Comparing the p and n-channel transistors response to radiation, the influence of X-rays is more noticeable in n-channel devices due to the positive charges at the buried oxide, increasing the back gate leakage current. The opposite effect is observed in p-channel devices for which the radiation improves some devices characteristics since it makes the device more immune to the back interface conduction. © 2013 IEEE.Acesso RestritoArtigo de evento10.1109/SBMicro.2013.6676144Back conductionMultiple-Gate MOSFETs (MuGFETs)X-ray radiation