AGOPIAN, P. G. D.MARTINO, J. A.KOBAYASHI, D.SIMOEN, E.CLAEYS, C.2022-01-122022-01-122011-09-23AGOPIAN, P. G. D.; MARTINO, J. A.; KOBAYASHI, D.; SIMOEN, E.; CLAEYS, C. Impact of proton irradiation on strained triple gate SOI p- and n-MOSFETs. Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS, p. 7-10, Sept. 2011.https://repositorio.fei.edu.br/handle/FEI/4182In this work the proton irradiation influence on basic and analog parameters of triple-gate SOI MOSFETs is investigated. The studied devices are strained and unstrained p- and nMuGFETs. The type of stress considered in each case, was the stress that results in a better performance of p- (CESL) and n-devices (sSOI+CESL). Although the results showed the worse behavior for post-irradiated nMOS transistors, a higher immunity to the back interface influence was obtained for post-irradiated pMOS devices and consequently a better analog performance was observed. The unit gain frequency improved for p and nMOS post-irradiated devices. © 2011 IEEE.Acesso RestritoArtigo de evento10.1109/RADECS.2011.6131291proton-irradiationstrained silicontriple-gate