MARINELLO, GENAROBARRAUD, SYLVAINVINET, MAUDFAYNOT, OLIVIERPAZ, BRUNA CARDOSOMarcelo Antonio Pavanello2022-01-122022-01-122020-09-01MARINELLO, G.; BARRAUD, S.; VINET, M.; FAYNOT, O.; PAZ, B. C.; PAVANELLO, M. A. Evaluation of analog characteristics of n-Type vertically stacked nanowires. 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020.https://repositorio.fei.edu.br/handle/FEI/3626This paper aims at analyzing the analog characteristics of n-type vertically stacked nanowires with 2 channels, varying the fin width and channel length. The basic electrical parameters such as threshold voltage and subthreshold slope are extracted in the linear region, whereas the transconductance, output conductance, and intrinsic voltage gain are extracted in saturation.Acesso RestritoEvaluation of Analog Characteristics of n-Type Vertically Stacked NanowiresArtigo de evento10.1109/EUROSOI-ULIS49407.2020.9365636AnalogMOSFETNanowireStacked