Analysis of the leakage current in junctionless nanowire transistors

Trevisoli R.Trevisoli Doria R.De Souza M.Antonio Pavanello M.2019-08-192019-08-192013SOUZA, Michelly de; TREVISOLI, Renan D.; DORIA, Rodrigo Trevisoli; PAVANELLO, Marcelo A.;PAVANELLO, M. A.;PAVANELLO, M.;PAVANELLO, M.A.;PAVANELLO, MARCELO;ANTONIO PAVANELLO, MARCELO. Analysis of the leakage current in junctionless nanowire transistors. Applied Physics Letters, v. 103, n. 20, p. 202103, 2013.0003-6951https://repositorio.fei.edu.br/handle/FEI/1122This letter presents an analysis of the leakage current in Junctionless Nanowire Transistors. The analysis is performed using experimental data together with three-dimensional numerical simulations. The influences of the temperature, device dimensions, and doping concentration have been studied. The results of inversion-mode devices of similar dimensions are also presented for comparison purpose. © 2013 AIP Publishing LLC.Acesso RestritoAnalysis of the leakage current in junctionless nanowire transistorsArtigo10.1063/1.4829465