Trevisoli R.Doria R.T.De Souza M.Pavanello M.A.2019-08-192019-08-192014TREVISOLI, Renan Doria; DORIA, Rodrigo Trevisoli; DE SOUZA, Michelly; PAVANELLO, Marcelo A.. Substrate Bias Influence on the Operation of Junctionless Nanowire Transistors. IEEE Transactions on Electron Devices, v. 61, n. 5, p. 1575-1582, 2014.0018-9383https://repositorio.fei.edu.br/handle/FEI/1142The aim of this paper is to analyze the substrate bias influence on the operation of junctionless nanowire transistors based on 3-D simulated and experimental results, accomplished by modeled data. The threshold voltage, the maximum transconductance, the subthreshold slope, the drain-induced barrier lowering (DIBL), and the ION/IOFF ratio are the key parameters under analysis. It has been shown that the negative back bias can reduce the short-channel effects occurrence, improving the ION/ OFF ratio and DIBL. © 1963-2012 IEEE.Acesso RestritoArtigo10.1109/TED.2014.2309334Junctionless transistorsmaximum transconductancesubstrate biassubthreshold slopethreshold voltage