Boosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature Environment

GALEMBECK, EGON H.S.RENAUX, CHRISTIANFLANDRE, DenisFINCO, SAULOGIMENEZ, SALVADOR P.2019-08-192019-08-192017GALEMBECK, EGON H.S.; RENAUX, CHRISTIAN; FLANDRE, Denis; FINCO, SAULO; GIMENEZ, SALVADOR P.. Boosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature Environment. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v. 17, n. 1, p. 1-1, 2017.1530-4388https://repositorio.fei.edu.br/handle/FEI/1313Acesso RestritoBoosting the SOI MOSFET Electrical Performance by Using the Octagonal Layout Style in High Temperature EnvironmentArtigo10.1109/tdmr.2017.2652729