RODRIGUES, M.CRUZ, E. O.Milene GaletiMARTINO, J. A.2022-01-122022-01-122012-08-30RODRIGUES, M.; CRUZ, E. O.; GALETI, M.; MARTINO, J. A. Analysis of the self-heating effect in UTBOX devices. ECS Transactions, v. 49, n. 1, p. 153- 160, 2012.1938-6737https://repositorio.fei.edu.br/handle/FEI/4161This work presents a study of the self-heating effect (SHE) on -n type UTBOX devices. Thinner buried oxide indicated a reduction on degradation caused by the SH phenomenon as shown by drain current and transient time. Addressed to that, a smaller output conductance variation with the frequency was also related where a higher frequency is required for the SHE emergence. The ground plane region was also considered on the UTBOX devices indicating to be favorable in suppress the SHE. © The Electrochemical Society.Acesso AbertoArtigo de evento10.1149/04901.0153ecst