BOAS A. C. V.DE MELO, M. A. A.Roberto SantosRenato GiacominiMEDINA, N. H.SEIXAS, L. E.FINCO, S.PALOMO, F. R.ROMERO-MAESTRO A.Marcilei Aparecida Guazzelli2022-05-012022-05-012019-09-20BOAS A. C. V.; DE MELO, M. A. A.; SANTOS, R.; GIACOMINI, R.; MEDINA, N. H.; SEIXAS, L. E.; FINCO, S.; PALOMO, F. R.; ROMERO-MAESTRO A.; GUAZZELLI, M. A. Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments. 2019 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019, Sept. 2019.https://repositorio.fei.edu.br/handle/FEI/4486The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias-condition. Switching tests were performed before, during and after irradiation. The devices were characterized at temperatures ranging from -50°C to +75°C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments.Acesso RestritoArtigo de evento10.1109/RADECS47380.2019.9745697GaNHEMTRadiation EffectsTotal Ionizing Dose