CIRNE, K. H.Marcilei Aparecida GuazzelliDE LIMA, J. A.SEIXAS JUNIOR, L. E.Salvador Gimenez2022-01-122022-01-122011-01-05CIRNE, K. H.; GUAZZELLI, M. A.; DE LIMA, J. A.; SEIXAS JUNIOR, L. E.; GIMENEZ, S. X-ray radiation effects in the circular-gate transistors. ECS Transactions, v. 35, n. 5, p. 259-264, Jan. 2011.1938-5862https://repositorio.fei.edu.br/handle/FEI/4202This work performs two experimental comparative analyses of the x-ray radiation effects in the Conventional, Wave and Overlapping-Circular-Gate nMOSFETs. In the first experiment, the x-ray radiation influence is studied without biasing the devices during the irradiation process, considering two channel lengths and after they have been exposed up to a x-ray irradiation of 1.5 Grad and with a dose ratio of 22 Mrad/min. The second one performs an experimental comparative study of the x-ray radiation influence between the Conventional and Overlapping-Circular Gate nMOSFET for a channel length equal to 12 μm, when they are submitted to the x-ray irradiation of 60 Mrad and maintaining the same bias conditions (overdrive gate and drain voltages) during the irradiation process. In both studies, we observe that the Overlapping-Circular Gate layout style presents higher x-ray irradiation robustness than those found in the other transistors studied, due to the absence of the bird's beak in Overlapping-Circular Gate MOSFET. ©The Electrochemical Society.Acesso RestritoArtigo de evento10.1149/1.3570804