Influence of the crystal orientation on the operation of junctionless nanowire transistors

Marcelo Antonio PavanelloTREVISOLI, R.Rodrido DoriaMichelly De SouzaMarcelo Antonio PavanelloBARRAUD, S.VINET, M.2022-01-122022-01-122017-01-03TREVISOLI, R.; DORIA, R.; DE SOUZA, M.; PAVANELLO, M. A.; BARRAUD, S.; VINET, M. Influence of the crystal orientation on the operation of junctionless nanowire transistors. 2016 SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2016. Jan. 2017.https://repositorio.fei.edu.br/handle/FEI/3854This work presents, for the first time, an analysis of the influence of the crystal orientation on the electrical performance of Junctionless Nanowire Transistors. Experimental results demonstrate that the device rotation from the standard <110> to the <100> direction over a (100) SOI wafer can significantly degrade the performance of the transistors.Acesso RestritoInfluence of the crystal orientation on the operation of junctionless nanowire transistorsArtigo de evento10.1109/S3S.2016.7804380ION/IOFF ratioJunctionless Nanowires TransistorsOrientationTransconductance