TREVISOLI, R.Rodrido DoriaMichelly De SouzaBARRAUD, S.VINET, M.CASSE, M.REIMBOLD, G.FAYNOT, O.GHIBAUDO, G.Marcelo Antonio Pavanello2022-01-122022-01-122017-07-050018-9383https://repositorio.fei.edu.br/handle/FEI/3836This paper presents a new method for the series resistance extraction in ultimate MOSFETs using a single drain current versus gate voltage characteristic curve. The method is based on the Y-function curve, such that the series resistance is obtained through the curve of the total resistance as a function of the inverse of the Y-function. It includes both first-and second-order mobility degradation factors. To validate the proposed method, numerical simulations have been performed for devices of different characteristics. Besides, the method applicability has been demonstrated for experimental silicon nanowires and FinFETs. Apart from that, devices with different channel lengths can be used to estimate the mobility degradation factor influence.Acesso RestritoArtigo10.1109/TED.2017.2704928Extraction methodMOSFETsnanowiresseries resistance