D´OLIVEIRA, L. M.Rodrido DoriaMarcelo Antonio PavanelloFLANDRE. D.Michelly De Souza2022-01-122022-01-122015-09-04D´OLIVEIRA, L. M.; DORIA, R.; PAVANELLO, M. A.; FLANDRE, D.; DE SOUZA, M. Effect of channel doping concentration on the harmonic distortion of asymmetric n-and p-type self-cascode MOSFETs. SBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices, Sept. 2015.https://repositorio.fei.edu.br/handle/FEI/3951© 2015 IEEE.This paper compares the harmonic distortion of n-and p-type symmetric (S-SC) and asymmetric self-cascode (A-SC) structures of different channel doping concentrations, providing a physic analysis of its behavior. This study is made by experimental measurements of structures composed by n-and p-type MOSFETs taking the second and third order harmonics as figures of merit. For strong inversion, the normalized second order harmonic distortion was better for the A-SC structures composed by devices with lower channel doping concentration on the transistor near the drain for either n-and p-type composite MOSFETs.Acesso RestritoArtigo de evento10.1109/SBMicro.2015.7298135Asymmetric Self-CascodeHarmonic DistortionSOI nMOSFETsSOI pMOSFETsSymmetric Self-Cascode