Silveira M.A.G.Cirne K.H.Santos R.B.B.Gimenez S.P.Medina N.H.Added N.Tabacniks M.H.Barbosa M.D.L.Seixas L.E.Melo W.De Lima J.A.2019-08-192019-08-192012Silveira, M.A.G.; Melo, W.; de Lima, J.A.; Cirne, K.H.; Santos, R.B.B.; Gimenez, S.P.; Medina, N.H.; ADDED, N.; Tabacniks, M.H.; Barbosa, M.D.L.; Seixas, L.E.. Performance of electronic devices submitted to X-rays and high energy proton beams. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms (Print), v. 273, p. 135-138, 2012.0168-583Xhttps://repositorio.fei.edu.br/handle/FEI/1447In this work we have studied the radiation effects on MOSFET electronic devices. The integrated circuits were exposed to 10 keV X-ray radiation and 2.6 MeV energy proton beam. We have irradiated MOSFET devices with two different geometries: rectangular-gate transistor and circular-gate transistor. We have observed the cumulative dose provokes shifts on the threshold voltage and increases or decreases the transistor's off-state and leakage current. The position of the trapped charges in modern CMOS technology devices depends on radiation type, dose rate, total dose, applied bias and is a function of device geometry. We concluded the circular-gate transistor is more tolerant to radiation than the rectangular-gate transistor. © 2011 Elsevier B.V. All rights reserved.Acesso RestritoArtigo de evento10.1016/j.nimb.2011.07.058Electronic devicesMOSFETProton beamRadiation effectsTotal ionizing dose (TID)Trapped chargeX-ray